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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2211T1M
P-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2211T1M is P-channel MOS Field Effect Transistor designed
for power management applications of portable equipments, such as
load switch.
8
2.9 ± 0.1
0.65
5
A
0.145 ± 0.05
FEATURES
? Low on-state resistance
R DS(on)1 = 25 m Ω MAX. (V GS = ? 4.5 V, I D = ? 7.5 A)
0 to 0.025
R DS(on)2 = 34 m Ω MAX. (V GS = ? 2.5 V, I D = ? 3.8 A)
R DS(on)3 = 66 m Ω MAX. (V GS = ? 1.8 V, I D = ? 3.8 A)
? Built-in gate protection diode
? ? 1.8 V Gate drive available
ORDERING INFORMATION
0.32 ± 0.05
S
1
4
0.05 M S A
0.05 S
1, 2, 3, 6, 7, 8: Drain
4 : Gate
5 : Source
PART NUMBER
PACKING
PACKAGE
μ PA2211T1M-T1-AT
μ PA2211T1M-T2-AT
Note
Note
8 mm embossed taping
3000 p/reel
8-pin VSOF (1629)
0.011 g TYP.
Note Pb-free (This product does not contain Pb in external electrode and
other parts.)
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C, All terminals are connected.)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
V DSS
V GSS
? 12
m 8
V
V
EQUIVALENT CIRCUIT
Drain Current (pulse)
Total Power Dissipation
Drain Current (DC)
Note1
Note2
Total Power Dissipation (PW = 5 sec)
Note2
I D(DC)
I D(pulse)
P T1
P T2
m 7.5
m 30
1.1
2.5
A
A
W
W
Gate
Drain
Body
Diode
Channel Temperature
Storage Temperature
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
T ch
T stg
150
? 55 to +150
° C
° C
Gate
Protection
Diode
Source
2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19452EJ1V0DS00 (1st edition)
Date Published September 2008 NS
Printed in Japan
2008
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